Photonic semiconductor device and method of manufacture

ABSTRACT

A package includes an interposer structure including a first via; a first interconnect device including conductive routing and which is free of active devices; an encapsulant surrounding the first via and the first interconnect device; and a first interconnect structure over the encapsulant and connected to the first via and the first interconnect device; a first semiconductor die bonded to the first interconnect structure and electrically connected to the first interconnect device; and a first photonic package bonded to the first interconnect structure and electrically connected to the first semiconductor die through the first interconnect device, wherein the first photonic package includes a photonic routing structure including a waveguide on a substrate; a second interconnect structure over the photonic routing structure, the second interconnect structure including conductive features and dielectric layers; and an electronic die bonded to and electrically connected to the second interconnect structure.

PRIORITY CLAIM AND CROSS-REFERENCE

This application claims the benefits of U.S. Provisional Application No.62/902,602, filed on Sep. 19, 2019, which application is herebyincorporated herein by reference in its entirety.

BACKGROUND

Electrical signaling and processing are one technique for signaltransmission and processing. Optical signaling and processing have beenused in increasingly more applications in recent years, particularly dueto the use of optical fiber-related applications for signaltransmission.

Optical signaling and processing are typically combined with electricalsignaling and processing to provide full-fledged applications. Forexample, optical fibers may be used for long-range signal transmission,and electrical signals may be used for short-range signal transmissionas well as processing and controlling. Accordingly, devices integratingoptical components and electrical components are formed for theconversion between optical signals and electrical signals, as well asthe processing of optical signals and electrical signals. Packages thusmay include both optical (photonic) dies including optical devices andelectronic dies including electronic devices.

BRIEF DESCRIPTION OF THE DRAWINGS

Aspects of the present disclosure are best understood from the followingdetailed description when read with the accompanying figures. It isnoted that, in accordance with the standard practice in the industry,various features are not drawn to scale. In fact, the dimensions of thevarious features may be arbitrarily increased or reduced for clarity ofdiscussion.

FIG. 1 illustrates a cross-sectional view of an interconnect device, inaccordance with some embodiments.

FIGS. 2 through 11 illustrate cross-sectional views of intermediatesteps of forming a photonic package, in accordance with someembodiments.

FIGS. 12 and 13 illustrate cross-sectional views of photonic packages,in accordance with some embodiments.

FIGS. 14 through 22 illustrate cross-sectional views of intermediatesteps of forming an interposer structure, in accordance with someembodiments.

FIGS. 23 and 24 illustrate cross-sectional views of intermediate stepsof forming a photonic system, in accordance with some embodiments.

FIG. 25 illustrates a cross-sectional view of a photonic system, inaccordance with some embodiments.

FIG. 26 illustrates a plan view of a photonic system, in accordance withsome embodiments.

FIG. 27 illustrates a cross-sectional view of a photonic system, inaccordance with some embodiments.

FIG. 28 illustrates a cross-sectional view of a photonic system havingan integrated passive device, in accordance with some embodiments.

DETAILED DESCRIPTION

The following disclosure provides many different embodiments, orexamples, for implementing different features of the invention. Specificexamples of components and arrangements are described below to simplifythe present disclosure. These are, of course, merely examples and arenot intended to be limiting. For example, the formation of a firstfeature over or on a second feature in the description that follows mayinclude embodiments in which the first and second features are formed indirect contact, and may also include embodiments in which additionalfeatures may be formed between the first and second features, such thatthe first and second features may not be in direct contact. In addition,the present disclosure may repeat reference numerals and/or letters inthe various examples. This repetition is for the purpose of simplicityand clarity and does not in itself dictate a relationship between thevarious embodiments and/or configurations discussed.

Further, spatially relative terms, such as “beneath,” “below,” “lower,”“above,” “upper” and the like, may be used herein for ease ofdescription to describe one element or feature's relationship to anotherelement(s) or feature(s) as illustrated in the figures. The spatiallyrelative terms are intended to encompass different orientations of thedevice in use or operation in addition to the orientation depicted inthe figures. The apparatus may be otherwise oriented (rotated 90 degreesor at other orientations) and the spatially relative descriptors usedherein may likewise be interpreted accordingly.

In this disclosure, various aspects of a package and the formationthereof are described. Three-dimensional (3D) packages including bothoptical devices and electrical devices, and the method of forming thesame are provided, in accordance with some embodiments. In particular,electronic dies are formed over a waveguide structure that provide aninterface between electrical signals sent or received from a processingdevice and optical signals sent or received from an optical fiber oroptical waveguide network. The electronic dies and the processing deviceare attached to an interposer structure that facilitates transmission ofelectrical signals between the electronic dies and the processingdevice. The interposer structure may be formed of a composite materialor a molding compound, and may include embedded interconnect devicesthat allow for improved high-speed transmission of electrical signals.The intermediate stages of forming the packages are illustrated, inaccordance with some embodiments. Some variations of some embodimentsare discussed. Throughout the various views and illustrativeembodiments, like reference numbers are used to designate like elements.

FIG. 1 illustrates a cross-sectional view of an interconnect device 50,in accordance with some embodiments. The interconnect device 50 will beincorporated into an interposer structure 250 (see FIG. 22) insubsequent processing to form a photonic system 300 (see FIG. 24). Theinterconnect device 50 provides electrical connection between devicesattached to the interposer structure 250 in the photonic system 300,such as between a photonic package 100 and a processing die 324 and/or amemory die 326 (see FIG. 24). In some embodiments, the interconnectdevice 50 includes through-substrate vias (TSVs) 54 to make electricalconnections between conductive features on opposite sides of theinterconnect device 50. The TSVs 54 of the interconnect device 50 areoptional, and may not be present in some embodiments. The interconnectdevice 50 may be formed using applicable manufacturing processes. Theinterconnect device 50 may be free of active devices and/or free ofpassive devices. In some embodiments, the interconnect device 50 mayhave a thickness that is between about 100 μm and about 500 μm. In someembodiments, an interconnect device 50 may have lateral dimensionsbetween about 2 mm by 4 mm and about 12 mm by 25 mm, such as about 3 mmby 20 mm.

Still referring to FIG. 1, the interconnect device 50 may include afirst interconnect structure 60 formed on a substrate 52. The substrate52 may be, for example, a glass substrate, a ceramic substrate, asemiconductor substrate, or the like. In some embodiments, the substrate52 may be a silicon wafer or an active layer of asemiconductor-on-insulator (SOI) substrate, or the like. The substrate52 may include a semiconductor material, such as doped or undopedsilicon, or may include other semiconductor materials, such asgermanium; a compound semiconductor including silicon carbide, galliumarsenic, gallium phosphide, indium phosphide, indium arsenide, and/orindium antimonide; an alloy semiconductor including SiGe, GaAsP, AlInAs,AlGaAs, GaInAs, GaInP, and/or GaInAsP; or combinations thereof. Othersubstrates, such as multi-layered or gradient substrates, may also beused. In some embodiments, multiple interconnect devices 50 may beformed on a single substrate 52 and singulated in to form individualinterconnect devices 50, such as the individual interconnect device 50shown in FIG. 1. The substrate 52 may be referred to as having a frontside or front surface (e.g., the side facing upwards in FIG. 1), and aback side or back surface (e.g., the side facing downwards in FIG. 1).

In some embodiments, the interconnect device 50 comprises one or morelayers of electrical routing 62 (e.g., redistribution layers (RDLs),metallization patterns or layers, conductive lines, and vias, or thelike) in a first interconnect structure 60 formed over the substrate 52.The electrical routing 62 may be formed of alternating layers ofdielectric (e.g., low-k dielectric material) and conductive material(e.g., copper) with vias interconnecting the layers of conductivematerial and may be formed through any suitable process (such asdeposition, damascene, dual damascene, or the like).

In some embodiments, the electrical routing 62 is formed using adamascene process in which a respective dielectric layer is patternedand etched utilizing photolithography techniques to form trenchescorresponding to the desired pattern of metallization layers and/orvias. An optional diffusion barrier and/or optional adhesion layer maybe deposited and the trenches may be filled with a conductive material.Suitable materials for the barrier layer includes titanium, titaniumnitride, tantalum, tantalum nitride, or other alternatives, and suitablematerials for the conductive material include copper, silver, gold,tungsten, aluminum, combinations thereof, or the like. In an embodiment,the metallization layers may be formed by depositing a seed layer ofcopper or a copper alloy, and filling the trenches by electroplating. Achemical mechanical planarization (CMP) process or the like may be usedto remove excess conductive material from a surface of the respectivedielectric layer and to planarize the surface for subsequent processing.

In some embodiments, the use of a damascene or dual damascene processcan form electrical routing 62 having a smaller pitch (e.g., “fine-pitchrouting”), which can increase the density of the electrical routing 62and also may allow for improved conduction and connection reliabilitywithin the interconnect device 50. In some cases, during high-speedoperation (e.g., greater than about 2 Gbit/second), electrical signalsmay be conducted near the surfaces of conductive components. Fine-pitchrouting may have less surface roughness than other types of routing, andthus can reduce resistance experienced by higher-speed signals and alsoreduce signal loss (e.g insertion loss) during high-speed operation.This can improve the performance of high-speed operation, for example,of Serializer/Deserializer (“SerDes”) circuits or other circuits thatmay be operated at higher speeds.

In some embodiments, the interconnect device 50 further includes pads72, such as aluminum pads, to which external connections are made. Thepads 72 may be formed on the first interconnect structure 60 andelectrically connected to the electrical routing 62. In someembodiments, one or more passivation films 74 are formed on portions ofthe first interconnect structure 60 and the pads 72. Openings extendthrough the passivation films 74 to the pads 72, and conductiveconnectors 76 extend through the openings in the passivation films 74 tocontact the pads 72.

In some embodiments, the conductive connectors 76 comprise metal pads ormetal pillars (such as copper pillars). The conductive connectors 76 mayinclude a conductive material such as solder, copper, aluminum, gold,nickel, silver, palladium, tin, the like, or a combination thereof. Insome embodiments, the metal pillars may be solder-free and/or havesubstantially vertical sidewalls. In some embodiments, a metal cap layeris formed on the top of the metal pillars. The metal cap layer mayinclude nickel, tin, tin-lead, gold, silver, palladium, indium,nickel-palladium-gold, nickel-gold, the like, or a combination thereofand may be formed by a plating process. In some embodiments, theconductive connectors 76 are formed using a plating process.

A dielectric layer 78 may (or may not) be formed on the interconnectdevice 50, such as on the passivation films 74 and the conductiveconnectors 76. The dielectric layer 78 may laterally encapsulate theconductive connectors 76, and the dielectric layer 78 may be laterallycoterminous with the interconnect device 50. Initially, the dielectriclayer 78 may bury the conductive connectors 76, such that the topmostsurface of the dielectric layer 78 is above the topmost surfaces of theconductive connectors 76, as shown in FIG. 1. In some embodiments inwhich a solder material is disposed on the conductive connectors 76, thedielectric layer 78 may bury the solder material as well. Alternatively,the solder material may be removed prior to forming the dielectric layer78.

The dielectric layer 78 may be a polymer such as PBO, polyimide, BCB, orthe like; a nitride such as silicon nitride or the like; an oxide suchas silicon oxide, PSG, BSG, BPSG, or the like; an encapsulant, moldingcompound, or the like; the like, or a combination thereof. Thedielectric layer 78 may be formed, for example, by spin coating,lamination, chemical vapor deposition (CVD), or the like. In someembodiments, the conductive connectors 76 remain buried and are exposedduring a subsequent process for packaging the interconnect device 50,such as that described below for FIG. 17. Exposing the conductiveconnectors 76 may remove any solder regions that may be present on theconductive connectors 76.

Still referring to FIG. 1, the interconnect device 50 may includethrough substrate vias (TSVs) 54 that extend through the substrate 52 toelectrically connect the first interconnect structure 60 to externalcomponents on the side of the substrate 52 opposite the firstinterconnect structure 60. In other embodiments, the interconnect device50 does not include TSVs 54. In an embodiment, the TSVs 54 may be formedby initially forming through substrate via (TSV) openings into thesubstrate 52 prior to forming the first interconnect structure 60. TheTSV openings may be formed by applying and patterning a photoresist (notshown) to expose regions of the substrate 52, and then etching theexposed portions of the substrate 52 to the desired depth. The TSVopenings may be formed so as to extend partially into the substrate 52,and may extend to a depth greater than the eventual desired height ofthe substrate 52.

Once the TSV openings have been formed within the substrate 52, the TSVopenings may be lined with a liner (not illustrated). The liner may be,e.g., an oxide formed from tetraethylorthosilicate (TEOS) or siliconnitride, although any suitable dielectric material may alternatively beused. The liner may be formed using a plasma enhanced chemical vapordeposition (PECVD) process, although other suitable processes, such asphysical vapor deposition or a thermal process, may alternatively beused. Once the liner has been formed along the sidewalls and bottom ofthe TSV openings, a barrier layer (also not independently illustrated)may be formed and the remainder of the TSV openings may be filled withconductive material, forming the TSVs 54. The conductive material maycomprise copper, although other suitable materials such as aluminum,alloys, doped polysilicon, combinations thereof, and the like, mayalternatively be utilized. The conductive material may be formed byelectroplating copper onto a seed layer (not shown), filling andoverfilling the TSV openings. Once the TSV openings have been filled,excess liner, barrier layer, seed layer, and conductive material outsideof the TSV openings may be removed (e.g., using a CMP process, agrinding process, or the like) to form the TSVs 54. The substrate 52 maythen be thinned (e.g., using a CMP process, a grinding process, or thelike) to expose the TSVs 54, as shown in FIG. 1.

FIGS. 2 through 13 show cross-sectional views of intermediate steps offorming a photonic package 100 (see FIGS. 12-13), in accordance withsome embodiments. In some embodiments, the photonic package 100 acts asan input/output (I/O) interface between optical signals and electricalsignals in the photonic system 300 (see FIG. 24). Turning first to FIG.2, a buried oxide (“BOX”) substrate 102 is provided, in accordance withsome embodiments. The BOX substrate 102 includes an oxide layer 102Bformed over a substrate 102C, and a silicon layer 102A formed over theoxide layer 102B. The substrate 102C may be, for example, a materialsuch as a glass, ceramic, dielectric, a semiconductor, the like, or acombination thereof. In some embodiments, the substrate 102C may be asemiconductor substrate, such as a bulk semiconductor or the like, whichmay be doped (e.g., with a p-type or an n-type dopant) or undoped. Thesubstrate 102C may be a wafer, such as a silicon wafer (e.g., a 12-inchsilicon wafer). Other substrates, such as a multi-layered or gradientsubstrate may also be used. In some embodiments, the semiconductormaterial of the substrate 102C may include silicon; germanium; acompound semiconductor including silicon carbide, gallium arsenic,gallium phosphide, indium phosphide, indium arsenide, and/or indiumantimonide; an alloy semiconductor including SiGe, GaAsP, AlInAs,AlGaAs, GaInAs, GaInP, and/or GaInAsP; or combinations thereof. Theoxide layer 102B may be, for example, a silicon oxide or the like. Insome embodiments, the oxide layer 102B may have a thickness betweenabout 0.5 μm and about 4 μm, in some embodiments. The silicon layer 102Amay have a thickness between about 0.1 μm and about 1.5 μm, in someembodiments. The BOX substrate 102 may be referred to as having a frontside or front surface (e.g., the side facing upwards in FIG. 2), and aback side or back surface (e.g., the side facing downwards in FIG. 2).

In FIG. 3, the silicon layer 102A is patterned to form silicon regionsfor waveguides 104, photonic components 106A-B, and couplers 107, inaccordance with some embodiments. The silicon layer 102A may bepatterned using suitable photolithography and etching techniques. Forexample, a hardmask layer (e.g., a nitride layer or other dielectricmaterial, not shown in FIG. 3) may be formed over the silicon layer 102Aand patterned, in some embodiments. The pattern of the hardmask layermay then be transferred to the silicon layer 102A using one or moreetching techniques, such as dry etching and/or wet etching techniques.For example, the silicon layer 102A may be etched to form recessesdefining the waveguides 104, with sidewalls of the remaining unrecessedportions defining sidewalls of the waveguides 104. In some embodiments,more than one photolithography and etching sequence may be used in orderto pattern the silicon layer 102A. One waveguide 104 or multiplewaveguides 104 may be patterned from the silicon layer 102A. If multiplewaveguides 104 are formed, the multiple waveguides 104 may be individualseparate waveguides 104 or connected as a single continuous structure.In some embodiments, one or more of the waveguides 104 form a continuousloop. For example, in the cross-sectional view illustrated in FIG. 3,the portions of the waveguides 104 shown may be part of a continuousloop comprising a single waveguide 104. Other configurations orarrangements of waveguides 104, the photonic components 106A-B, or thecouplers 107 are possible. In some cases, the waveguides 104, thephotonic components 106A-B, and the couplers 107 may be collectivelyreferred to as “the photonic layer.”

The photonic components 106A-B may be integrated with the waveguides104, and may be formed with the silicon waveguides 104. The photoniccomponents 106A-B may be optically coupled to the waveguides 104 tointeract with optical signals within the waveguides 104. The photoniccomponents 106A-B may include, for example, photodetectors 106A and/ormodulators 106B. For example, a photodetector 106A may be opticallycoupled to the waveguides 104 to detect optical signals within thewaveguides 104, and a modulator 106B may be optically coupled to thewaveguides 104 to generate optical signals within the waveguides 104 bymodulating optical power within the waveguides 104. In this manner, thephotonic components 106A-B facilitate the input/output (I/O) of opticalsignals to and from the waveguides 104. In other embodiments, thephotonic components may include other active or passive components, suchas laser diodes, optical signal splitters, or other types of photonicstructures or devices. Optical power may be provided to the waveguides104 by, for example, an optical fiber 150 (see FIGS. 12-13) coupled toan external light source, or the optical power may be generated by aphotonic component within the photonic package 100 such as a laserdiode.

In some embodiments, the photodetectors 106A may be formed by, forexample, partially etching regions of the waveguides 104 and growing anepitaxial material on the remaining silicon of the etched regions. Thewaveguides 104 may be etched using acceptable photolithography andetching techniques. The epitaxial material may comprise, for example, asemiconductor material such as germanium (Ge), which may be doped orundoped. In some embodiments, an implantation process may be performedto introduce dopants within the silicon of the etched regions as part ofthe formation of the photodetectors 104A. The silicon of the etchedregions may be doped with p-type dopants, n-type dopants, or acombination.

In some embodiments, the modulators 106B may be formed by, for example,partially etching regions of the waveguides 104 and then implantingappropriate dopants within the remaining silicon of the etched regions.The waveguides 104 may be etched using acceptable photolithography andetching techniques. In some embodiments, the etched regions used for thephotodetectors 106A and the etched regions used for the modulators 106Bmay be formed using one or more of the same photolithography or etchingsteps. The silicon of the etched regions may be doped with p-typedopants, n-type dopants, or a combination. In some embodiments, theetched regions used for the photodetectors 106A and the etched regionsused for the modulators 106B may be implanted using one or more of thesame implantation steps.

In some embodiments, one or more couplers 107 may be integrated with thewaveguides 104, and may be formed with the waveguides 104. The couplers107 may include grating couplers 107A and/or edge couplers 107B (seeFIGS. 12-13). The couplers 107 allow for optical signals and/or opticalpower to be transferred between an optical fiber 150 and the waveguides104 of the photonic package 100. In some embodiments, the couplers 107include grating couplers 107A, which allow optical signals and/oroptical power to be transferred between the photonic package 100 and anoptical fiber 150 that is vertically mounted over the photonic package100, such as shown in FIG. 12. In some embodiments, the couplers 107include edge couplers 107B, which allow optical signals and/or opticalpower to be transferred between the photonic package 100 and an opticalfiber 150 that is horizontally mounted near a sidewall of the photonicpackage 100, such as shown in FIG. 13. A photonic package 100 mayinclude a single coupler 107, multiple couplers 107, or multiple typesof couplers 107, in some embodiments. The couplers 107 may be formedusing acceptable photolithography and etching techniques. In someembodiments, the couplers 107 are formed using the same photolithographyor etching steps as the waveguides 104 and/or the photonic components106A-B. In other embodiments, the couplers 107 are formed after thewaveguides 104 and/or the photonic components 106A-B are formed.

In FIG. 4, a dielectric layer 108 is formed on the front side of the BOXsubstrate 102 to form a photonic routing structure 110, in accordancewith some embodiments. The dielectric layer 108 is formed over thewaveguides 104, the photonic components 106A-B, the couplers 107, andthe oxide layer 102B. The dielectric layer 108 may be formed of one ormore layers of silicon oxide, silicon nitride, a combination thereof, orthe like, and may be formed by CVD, PVD, atomic layer deposition (ALD),a spin-on-dielectric process, the like, or a combination thereof. Insome embodiments, the dielectric layer 108 may be formed by a highdensity plasma chemical vapor deposition (HDP-CVD), a flowable CVD(FCVD) (e.g., a CVD-based material deposition in a remote plasma systemand post curing to make it convert to another material, such as anoxide), the like, or a combination thereof. Other dielectric materialsformed by any acceptable process may be used. In some embodiments, thedielectric layer 108 is then planarized using a planarization processsuch as a CMP process, a grinding process, or the like. The dielectriclayer 108 may be formed having a thickness over the oxide layer 102Bbetween about 50 nm and about 500 nm, or may be formed having athickness over the waveguides 104 between about 10 nm and about 200 nm,in some embodiments. In some cases, a thinner dielectric layer 108 mayallow for more efficient optical coupling between a grating coupler 107Aand a vertically mounted optical fiber 150 (see FIG. 12).

Due to the difference in refractive indices of the materials of thewaveguides 104 and dielectric layer 108, the waveguides 104 have highinternal reflections such that light is substantially confined withinthe waveguides 104, depending on the wavelength of the light and therefractive indices of the respective materials. In an embodiment, therefractive index of the material of the waveguides 104 is higher thanthe refractive index of the material of the dielectric layer 108. Forexample, the waveguides 104 may comprise silicon, and the dielectriclayer 108 may comprise silicon oxide and/or silicon nitride.

In FIG. 5, openings 111 are formed extending into the substrate 102C, inaccordance with some embodiments. The openings 111 are formed extendingthrough the dielectric layer 108 and the oxide layer 102B, and extendpartially into the substrate 102C. The openings 111 may be formed byacceptable photolithography and etching techniques, such as by formingand patterning a photoresist and then performing an etching processusing the patterned photoresist as an etching mask. The etching processmay include, for example, a dry etching process and/or a wet etchingprocess.

In FIG. 6, a conductive material is formed in the openings 111, therebyforming vias 112, in accordance with some embodiments. In someembodiments, a liner (not shown), such as a diffusion barrier layer, anadhesion layer, or the like, may be formed in the openings 111 from TaN,Ta, TiN, Ti, CoW, or the like, and may be formed using suitable adeposition process such as ALD or the like. In some embodiments, a seedlayer (not shown), which may include copper or a copper alloy may thenbe deposited in the openings 111. The conductive material of the vias112 is formed in the openings 111 using, for example, ECP orelectro-less plating. The conductive material may include, for example,a metal or a metal alloy such as copper, silver, gold, tungsten, cobalt,aluminum, or alloys thereof. A planarization process (e.g., a CMPprocess or a grinding process) may be performed to remove excessconductive material along the top surface of the dielectric layer 108,such that top surfaces of the vias 112 and the dielectric layer 108 arelevel.

FIG. 6 also shows the formation of contacts 113 that extend through thedielectric layer 108 and are electrically connected to the photoniccomponents 106A-B. The contacts 113 allow electrical power or electricalsignals to be transmitted to the photonic components 106A-B andelectrical signals to be transmitted from the photonic components106A-B. In this manner, the photonic components 106A-B may convertelectrical signals (e.g., from an electronic die 122, see FIG. 8) intooptical signals transmitted by the waveguides 104, and/or convertoptical signals from the waveguides 104 into electrical signals (e.g.,that may be received by an electronic die 122). The contacts 113 may beformed before or after formation of the vias 112, and the formation ofthe contacts 113 and the formation of the vias 112 may share some stepssuch as deposition of the conductive material and/or planarization. Insome embodiments, the contact may be formed by a damascene process,e.g., single damascene, dual damascene, or the like. For example, insome embodiments, openings (not shown) for the contacts 113 are firstformed in the dielectric layer 108 using acceptable photolithography andetching techniques. A conductive material may then be formed in theopenings, forming the contacts 113. Excess conductive material may beremoved using a CMP process or the like. The conductive material of thecontacts 113 may be formed of a metal or a metal alloy includingaluminum, copper, tungsten, or the like, which may be the same as thatof the vias 112. The contacts 113 may be formed using other techniquesor materials in other embodiments.

In FIG. 7, second interconnect structure 120 is formed over thedielectric layer 108, in accordance with some embodiments. The secondinterconnect structure 120 includes dielectric layers 115 and conductivefeatures 114 formed in the dielectric layers 115 that provideinterconnections and electrical routing. For example, the secondinterconnect structure 120 may connect the vias 112, the contacts 113,and/or overlying devices such as electronic dies 122 (see FIG. 8). Thedielectric layers 115 may be, for example, insulating or passivatinglayers, and may comprise one or more materials similar to thosedescribed above for the dielectric layer 108, such as a silicon oxide ora silicon nitride, or may comprise a different material. The dielectriclayers 115 may be transparent to about the same wavelengths of light asthe dielectric layer 108. The dielectric layers 115 may be formed usinga technique similar to those described above for the dielectric layer108 or using a different technique. The conductive features 114 mayinclude conductive lines and vias, and may be formed by a damasceneprocess, e.g., single damascene, duel damascene, or the like. As shownin FIG. 6, conductive pads 116 are formed in the topmost layer of thedielectric layers 115. A planarization process (e.g., a CMP process orthe like) may be performed after forming the conductive pads 116 suchthat surfaces of the conductive pads 116 and the topmost dielectriclayer 115 are substantially coplanar. The second interconnect structure120 may include more or fewer dielectric layers 115, conductive features114, or conductive pads 116 than shown in FIG. 6. The secondinterconnect structure 120 may be formed having a thickness betweenabout 4 μm and about 7 μm, in some embodiments.

In some embodiments, some regions of the second interconnect structure120 are substantially free of the conductive features 114 or conductivepads 116 in order to allow transmission of optical power or opticalsignals through the dielectric layers 115. For example, these metal-freeregions may extend between a grating coupler 107A and a verticallymounted optical fiber 150 (see FIG. 12) to allow optical power oroptical signals to be coupled from the waveguides 104 into thevertically mounted optical fiber 150 and/or to be coupled from thevertically mounted optical fiber 150 into the waveguides 104. In somecases, a thinner second interconnect structure 120 may allow for moreefficient optical coupling between a grating coupler 107A and avertically mounted optical fiber 150.

In FIG. 8, an electronic die 122 is bonded to the second interconnectstructure 120, in accordance with some embodiments. The electronic dies122 may be, for example, semiconductor devices, dies, or chips thatcommunicate with the photonic components 106A-B using electricalsignals. One electronic die 122 is shown in FIG. 8, but a photonicpackage 100 may include two or more electronic dies 122 in otherembodiments. In some cases, multiple electronic dies 122 may beincorporated into a single photonic package 100 in order to reduceprocessing cost. The electronic die 122 includes die connectors 124,which may be, for example, conductive pads, conductive pillars, or thelike. In some embodiments, the electronic die 122 may have a thicknessbetween about 10 μm and about 35 μm, such as about 25 μm.

The electronic die 122 may include integrated circuits for interfacingwith the photonic components 106A-B, such as circuits for controllingthe operation of the photonic components 106A-B. For example, theelectronic die 122 may include controllers, drivers, transimpedanceamplifiers, the like, or combinations thereof. The electronic die 122may also include a CPU, in some embodiments. In some embodiments, theelectronic die 122 includes circuits for processing electrical signalsreceived from photonic components 106A-B, such as for processingelectrical signals received from a photodetector 106A. The electronicdie 122 may control high-frequency signaling of the photonic components106A-B according to electrical signals (digital or analog) received fromanother device, such as from a processing die 142 (see FIG. 24), in someembodiments. In some embodiments, the electronic die 122 may be anelectronic integrated circuit (EIC) or the like that providesSerializer/Deserializer (SerDes) functionality. In this manner, theelectronic die 122 may act as part of an I/O interface between opticalsignals and electrical signals within a photonic system 300.

In some embodiments, the electronic die 122 is bonded to the secondinterconnect structure 120 by dielectric-to-dielectric bonding and/ormetal-to-metal bonding (e.g., direct bonding, fusion bonding,oxide-to-oxide bonding, hybrid bonding, or the like). In suchembodiments, covalent bonds may be formed between oxide layers, such asthe topmost dielectric layers 115 and surface dielectric layers (notshown) of the electronic die 122. During the bonding, metal bonding mayalso occur between the die connectors 124 of the electronic die 122 andthe conductive pads 116 of the second interconnect structure 120. Theuse of dielectric-to-dielectric bonding may allow for materialstransparent to the relevant wavelengths of light to be deposited overthe second interconnect structure 120 and/or around the electronic die122 instead of opaque materials such as an encapsulant or a moldingcompound. For example, the dielectric material 126 may be formed from asuitably transparent material such as silicon oxide instead of an opaquematerial such as a molding compound. The use of a suitably transparentmaterial for the dielectric material 126 in this manner allows opticalsignals to be transmitted through the dielectric material 126, such astransmitting optical signals between a grating coupler 107A and avertically mounted optical fiber 150 located above the dielectricmaterial 126. Additionally, by bonding the electronic die 122 to thesecond interconnect structure 120 in this manner, the thickness of theresulting photonic package 100 may be reduced, and the optical couplingbetween a grating coupler 107A and a vertically mounted optical fiber150 may be improved. In this manner, the size or processing cost of aphotonic system may be reduced, and the optical coupling to externalcomponents may be improved. In some embodiments, the photonic packages100 described herein could be considered system-on-chip (SoC) orsystem-on-integrated-circuit (SoIC) devices.

In some embodiments, before performing the bonding process, a surfacetreatment is performed on the electronic die 122. In some embodiments,the top surfaces of the second interconnect structure 120 and/or theelectronic die 122 may first be activated utilizing, for example, a drytreatment, a wet treatment, a plasma treatment, exposure to an inertgas, exposure to H₂, exposure to N₂, exposure to O₂, the like, orcombinations thereof. However, any suitable activation process may beutilized. After the activation process, the second interconnectstructure 120 and/or the electronic die 122 may be cleaned using, e.g.,a chemical rinse. The electronic die 122 is then aligned with the secondinterconnect structure 120 and placed into physical contact with thesecond interconnect structure 120. The electronic die 122 may be placedon the second interconnect structure 120 using a pick-and-place process,for example. The second interconnect structure 120 and the electronicdie 122 may then be subjected to a thermal treatment and/or pressedagainst each other (e.g., by applying contact pressure) to bond thesecond interconnect structure 120 and the electronic die 122. Forexample, the second interconnect structure 120 and the electronic die122 may be subjected to a pressure of about 200 kPa or less, and to atemperature between about 200° C. and about 400° C. The secondinterconnect structure 120 and the electronic die 122 may then besubjected to a temperature at or above the eutectic point of thematerial of the conductive pads 116 and the die connectors 124 (e.g.,between about 150° C. and about 650° C.) to fuse the conductive pads 116and the die connectors 124. In this manner, the dielectric-to-dielectricbonding and/or metal-to-metal bonding of second interconnect structure120 and the electronic die 122 forms a bonded structure. In someembodiments, the bonded structure is baked, annealed, pressed, orotherwise treated to strengthen or finalize the bonds.

Turning to FIG. 9, a dielectric material 126 is formed over theelectronic dies 122 and the second interconnect structure 120, inaccordance with some embodiments. The dielectric material 126 may beformed of silicon oxide, silicon nitride, a polymer, the like, or acombination thereof. The dielectric material 126 may be formed by CVD,PVD, ALD, a spin-on-dielectric process, the like, or a combinationthereof. In some embodiments, the dielectric material 126 may be formedby HDP-CVD, FCVD, the like, or a combination thereof. The dielectricmaterial 126 may be a gap-fill material in some embodiments, which mayinclude one or more of the example materials above. In some embodiments,the dielectric material 126 may be a material (e.g., silicon oxide) thatis substantially transparent to light at wavelengths suitable fortransmitting optical signals or optical power between a verticallymounted optical fiber 150 and a grating coupler 107A. In someembodiments in which a grating coupler 107A is not present, thedielectric material 126 may comprise a relatively opaque material suchas an encapsulant, molding compound, or the like. Other dielectricmaterials formed by any acceptable process may be used.

Still referring to FIG. 9, the dielectric material 126 may be planarizedusing a planarization process such as a CMP process, a grinding process,or the like. The planarization process may expose the electronic dies122 such that surfaces of the electronic dies 122 and surfaces of thedielectric material 126 are coplanar. After planarization, thedielectric material 126 may have a thickness over the secondinterconnect structure 120 that is between about 10 μm and about 40 μm.In some embodiments, the combined thickness T1 of the dielectric layer108, the dielectric layers 115, and the dielectric material 126 over thegrating couplers 107A may be between about 14 μm and about 50 μm. Insome cases, a smaller thickness T1 may allow for more efficient opticalcoupling between a grating coupler 107A and a vertically mounted opticalfiber 150 (see FIG. 12). For example, in some embodiments, the thicknessT1 may be less than about 30 μm.

In FIG. 10, the structure is flipped over and attached to a firstcarrier 160, in accordance with some embodiments. The first carrier 160may be, for example, a wafer (e.g., a silicon wafer), a panel, a glasssubstrate, a ceramic substrate, or the like. The structure may beattached to the first carrier 160 using, for example, an adhesive or arelease layer (not shown).

In FIG. 11, the back side of the substrate 102C is thinned to expose thevias 112, and conductive pads 128 are formed, in accordance with someembodiments. The substrate 102C may be thinned by a CMP process, amechanical grinding, or the like. In FIG. 10, conductive pads 128 areformed on the exposed vias 112 and the substrate 102C, in accordancewith some embodiments. The conductive pads 128 may be conductive pads orconductive pillars that are electrically connected to the secondinterconnect structure 120. The conductive pads 128 may be formed from aconductive material such as copper, another metal or metal alloy, thelike, or combinations thereof. The material of the conductive pads 128may be formed by a suitable process, such as plating. For example, insome embodiments, the conductive pads 128 are metal pillars (such ascopper pillars) formed by a sputtering, printing, electro plating,electroless plating, CVD, or the like. The metal pillars may be solderfree and have substantially vertical sidewalls. In some embodiments, ametal cap layer (not shown) is formed on the top of the conductive pads128. The metal cap layer may include nickel, tin, tin-lead, gold,silver, palladium, indium, nickel-palladium-gold, nickel-gold, the like,or a combination thereof and may be formed by a plating process. In someembodiments, underbump metallizations (UBMs, not shown) may be formedover the conductive pads 128. In some embodiments, a passivation layer(not shown) such as a silicon oxide or silicon nitride may be formedover the substrate 102C to surround or partially cover the conductivepads 128. In some embodiments, a solder material (not shown) such assolder bumps may be formed over the conductive pads 128.

FIGS. 12-13 illustrate photonic packages 100 optically coupled tooptical fibers 150, in accordance with some embodiments. The photonicpackages 100 shown in FIGS. 12-13 have been removed from the firstcarrier 160 and are shown flipped over relative to FIG. 11. FIG. 12illustrates a photonic package 100 comprising a grating coupler 107Aconfigured to optically couple to a vertically mounted optical fiber150, and FIG. 13 illustrates a photonic package 100 comprising an edgecoupler 107B configured to optically couple to a horizontally mountedoptical fiber 150. The optical fiber 150 may be mounted to the photonicpackage 100 using an optical glue 152 (see FIGS. 24 and 25) or the like.The optical fibers 150 are shown in FIGS. 12-13 for illustrativepurposes, and in some cases an optical fiber 150 is attached to aphotonic package 100 after the photonic package 100 is incorporatedwithin a photonic system 300 (see FIG. 24).

Referring to FIG. 12, a vertically mounted optical fiber 150 may bemounted at an angle with respect to the vertical axis or may belaterally offset from the grating coupler 107A. A grating coupler 107Amay be located near the edges of the photonic package 100 or away fromthe edges of the photonic package 100. The optical signals and/oroptical power transmitted between the vertically mounted optical fiber150 and the grating coupler 107A are transmitted through the dielectriclayer 108, the dielectric layers 115, and the dielectric material 126formed over the grating coupler 107A. For example, optical signals maybe transmitted from the optical fiber 150 to the grating coupler 107Aand into the waveguides 104, wherein the optical signals may be detectedby a photodetector 106A and transmitted as electrical signals into anelectronic die 122. Optical signals generated within the waveguides 104by the modulator 106B may similarly be transmitted from the gratingcoupler 107A to the vertically mounted optical fiber 150. Mounting theoptical fiber 150 in a vertical orientation may allow for improvedoptical coupling, reduced processing cost, or greater design flexibilityof a photonic package 100 or a photonic system 300.

Referring to FIG. 13, a horizontally mounted optical fiber 150 may bemounted at an angle with respect to the horizontal axis or may bevertically offset from the edge coupler 107B. An edge coupler 107B maybe located near an edges or sidewall of the photonic package 100. Theoptical signals and/or optical power transmitted between thehorizontally mounted optical fiber 150 and the edge coupler 107B aretransmitted through the dielectric layer 108. For example, opticalsignals may be transmitted from the horizontally mounted optical fiber150 to the edge coupler 107B and into the waveguides 104, wherein theoptical signals may be detected by a photodetector 106A and transmittedas electrical signals into an electronic die 122. Optical signalsgenerated within the waveguides 104 by the modulator 106B may similarlybe transmitted from the edge coupler 107B to the horizontally mountedoptical fiber 150. In this manner, a photonic package 100 or a photonicsystem 300 as described herein may be coupled to optical fibers 150 indifferent configurations, allowing for greater flexibility of design.

FIGS. 14 through 22 illustrate cross-sectional views of intermediatesteps during a process for forming an interposer structure 250incorporating interconnect devices 50, in accordance with someembodiments. In FIG. 14, a first carrier substrate 202 is provided, andthrough vias 206 are formed on the first carrier substrate 202. Thefirst carrier substrate 202 may be a glass carrier substrate, a ceramiccarrier substrate, a wafer (e.g., a silicon wafer), or the like. Asshown in FIG. 15, a release layer 204 may be formed over the firstcarrier substrate 202. The release layer 204 may be formed of apolymer-based material, which may be removed along with the firstcarrier substrate 202 from the overlying structures that will be formedin subsequent steps. In some embodiments, the release layer 204 is anepoxy-based thermal-release material, which loses its adhesive propertywhen heated, such as a light-to-heat-conversion (LTHC) release coating.In other embodiments, the release layer 204 may be an ultra-violet (UV)glue, which loses its adhesive property when exposed to UV lights. Therelease layer 204 may be dispensed as a liquid and cured, may be alaminate film laminated onto the first carrier substrate 202, or may bethe like. The top surface of the release layer 204 may be leveled andmay have a high degree of planarity.

Still referring to FIG. 14, the through vias 206 are formed over therelease layer 204. As an example to form the through vias 206, a seedlayer (not shown) is formed over the release layer 204. In someembodiments, the seed layer is a metal layer, which may be a singlelayer or a composite layer comprising a plurality of sub-layers formedof different materials. In a particular embodiment, the seed layercomprises a titanium layer and a copper layer over the titanium layer.The seed layer may be formed using, for example, PVD or the like. Aphotoresist is formed and patterned on the seed layer. The photoresistmay be formed by spin coating or the like and may be exposed to lightfor patterning. The pattern of the photoresist corresponds to conductivevias. The patterning forms openings through the photoresist to exposethe seed layer. A conductive material is formed in the openings of thephotoresist and on the exposed portions of the seed layer. Theconductive material may be formed by plating, such as electroplating orelectroless plating, or the like. The conductive material may comprise ametal, like copper, titanium, tungsten, aluminum, or the like. Thephotoresist and portions of the seed layer on which the conductivematerial is not formed are removed. The photoresist may be removed by anacceptable ashing or stripping process, such as using an oxygen plasmaor the like. Once the photoresist is removed, exposed portions of theseed layer are removed, such as by using an acceptable etching process,such as by wet or dry etching. The remaining portions of the seed layerand conductive material form the through vias 206.

In FIG. 15, one or more interconnect devices 50 are attached to therelease layer 204. In some embodiments, the interconnect devices 50 maybe attached to the release layer 204 by an adhesive (not shown). Theinterconnect devices 50 may be placed on the release layer 204 using,e.g., a pick-and-place process. FIG. 15 illustrates two attachedinterconnect devices 50, but in other embodiments, one interconnectdevice 50 or more than two interconnect devices 50 may be attached. Inembodiments in which multiple interconnect devices 50 are attached, theinterconnect devices 50 may have different sizes (e.g., differentheights and/or surface areas), or may have the same size (e.g., sameheights and/or surface areas). The configuration of the electricalrouting 62, the optional TSVs 54, or other features of the interconnectdevices 50 may be similar or different. The interconnect devices 50 maybe oriented with the substrate 52 toward the first carrier substrate202, as shown in FIG. 15, or may be oriented with the conductiveconnectors 76 toward the first carrier substrate 202. Differentinterconnect devices 50 may be attached to the release layer 204 indifferent orientations.

In FIG. 16, an encapsulant 208 is formed over the first carriersubstrate 202, in accordance with some embodiments. After formation, theencapsulant 208 encapsulates the through vias 206 and the interconnectdevices 50. The encapsulant 208 may be a molding compound, epoxy, or thelike. The encapsulant 208 may be applied by compression molding,transfer molding, lamination, or the like, and may be formed over thefirst carrier substrate 202 such that the through vias 206 and/or theinterconnect devices 50 are buried or covered. The encapsulant 208 isfurther formed in gap regions between the through vias 206 and/or theinterconnect devices 50. The encapsulant 208 may be applied in liquid orsemi-liquid form and then subsequently cured.

In FIG. 17, a planarization process is performed on the encapsulant 208to expose the through vias 206 and the conductive connectors 76 of theinterconnect devices 50. The planarization process may also removematerial of the through vias 206, material of the dielectric layer 78 ofthe interconnect devices 50, and/or material of the conductiveconnectors 76 of the interconnect devices 50 until the conductiveconnectors 76 and the through vias 206 are exposed. Top surfaces of thethrough vias 206, the conductive connectors 76, the dielectric layers78, or the encapsulant 208 may be coplanar after the planarizationprocess. The planarization process may be, for example, achemical-mechanical polish (CMP), a grinding process, or the like. Insome embodiments, the planarization may be omitted, for example, if thethrough vias 206 and/or the conductive connectors 76 are alreadyexposed.

In FIG. 18, a third interconnect structure 210 is formed over theencapsulant 208, the through vias 206, and the interconnect devices 50.In the embodiment shown, the third interconnect structure 210 includes adielectric layer 212, a metallization pattern 214 (sometimes referred toas redistribution layers or redistribution lines), and a dielectriclayer 216. The third interconnect structure 210 is optional. In someembodiments, a dielectric layer without metallization patterns is formedin lieu of the third interconnect structure 210.

The dielectric layer 212 may be formed on the encapsulant 208, thethrough vias 206, and the interconnect devices 50. In some embodiments,the dielectric layer 212 is formed of a polymer, such as polybenzoxazole(PBO), polyimide, benzocyclobutene (BCB), or the like. In otherembodiments, the dielectric layer 212 is formed of a nitride such assilicon nitride; an oxide such as silicon oxide, phosphosilicate glass(PSG), borosilicate glass (BSG), boron-doped phosphosilicate glass(BPSG), or the like; or the like. The dielectric layer 212 may be formedby any acceptable deposition process, such as spin coating, CVD,laminating, the like, or a combination thereof.

The metallization pattern 214 may be formed on the dielectric layer 212.As an example to form metallization pattern 214, a seed layer is formedover the dielectric layer 212. In some embodiments, the seed layer is ametal layer, which may be a single layer or a composite layer comprisinga plurality of sub-layers formed of different materials. In someembodiments, the seed layer comprises a titanium layer and a copperlayer over the titanium layer. The seed layer may be formed using, forexample, physical vapor deposition (PVD) or the like. A photoresist isthen formed and patterned on the seed layer. The photoresist may beformed by spin coating or the like and may be exposed to light forpatterning. The pattern of the photoresist corresponds to themetallization pattern 214. The patterning forms openings through thephotoresist to expose the seed layer. A conductive material is formed inthe openings of the photoresist and on the exposed portions of the seedlayer. The conductive material may be formed by plating, such aselectroplating or electroless plating, or the like. The conductivematerial may comprise a metal, like copper, titanium, tungsten,aluminum, or the like. Then, the photoresist and portions of the seedlayer on which the conductive material is not formed are removed. Thephotoresist may be removed by an acceptable ashing or stripping process,such as using an oxygen plasma or the like. Once the photoresist isremoved, exposed portions of the seed layer are removed, such as byusing an acceptable etching process, such as by wet or dry etching. Theremaining portions of the seed layer and conductive material form themetallization pattern 214.

The dielectric layer 216 may be formed on the metallization pattern 214and the dielectric layer 212. In some embodiments, the dielectric layer216 is formed of a polymer, which may be a photo-sensitive material suchas PBO, polyimide, BCB, or the like, that may be patterned using alithography mask. In other embodiments, the dielectric layer 216 isformed of a nitride such as silicon nitride; an oxide such as siliconoxide, PSG, BSG, BPSG; or the like. The dielectric layer 216 may beformed by spin coating, lamination, CVD, the like, or a combinationthereof. The dielectric layer 216 may be formed from a material similarto that of the dielectric layer 212, in some embodiments.

It should be appreciated that the third interconnect structure 210 mayinclude any number of dielectric layers and metallization patterns. Ifmore dielectric layers and metallization patterns are to be formed,steps and processes similar to those discussed above may be repeated.The metallization patterns may include conductive lines and conductivevias. The conductive vias may be formed during the formation of themetallization pattern by forming the seed layer and conductive materialof the metallization pattern in the opening of the underlying dielectriclayer. The conductive vias may therefore interconnect and electricallycouple the various conductive lines.

In FIG. 19, under-bump metallizations (UBMs) 220 and conductiveconnectors 222 are formed for external connection to the thirdinterconnect structure 210, in accordance with some embodiments. In anexample of forming the UBMs 220, the dielectric layer 216 is firstpatterned to form openings exposing portions of the through vias 206 andthe conductive connectors 76 of the interconnect devices 50. Thepatterning may be performed using an acceptable process, such as byexposing the dielectric layer 216 to light when the dielectric layer 216is a photo-sensitive material or by etching using, for example, ananisotropic etch. If the dielectric layer 216 is a photo-sensitivematerial, the dielectric layer 216 can be developed after the exposure.

The UBMs 220 have bump portions on and extending along the major surfaceof the dielectric layer 216, and have via portions extending through thedielectric layer 216 to physically and electrically couple themetallization pattern 214. As a result, the UBMs 220 are electricallycoupled to the through vias 206 and the interconnect devices 50. TheUBMs 220 may be formed of the same material as the metallization pattern214, and may be formed using a similar process (e.g., plating). In someembodiments, the UBMs 220 have a different size (e.g., width, thickness,etc.) than the metallization pattern 214.

The conductive connectors 222 are then formed on the UBMs 220, inaccordance with some embodiments. The conductive connectors 222 may be,for example, ball grid array (BGA) connectors, solder balls, metalpillars, controlled collapse chip connection (C4) bumps, micro bumps,electroless nickel-electroless palladium-immersion gold technique(ENEPIG) formed bumps, or the like. The conductive connectors 222 mayinclude a conductive material such as solder, copper, aluminum, gold,nickel, silver, palladium, tin, the like, or a combination thereof. Insome embodiments, the conductive connectors 222 are formed by initiallyforming a layer of solder through evaporation, electroplating, printing,solder transfer, ball placement, or the like. Once a layer of solder hasbeen formed on the structure, a reflow may be performed in order toshape the material into the desired bump shapes. In another embodiment,the conductive connectors 222 comprise metal pillars (such as a copperpillar) formed by a sputtering, printing, electro plating, electrolessplating, CVD, or the like. The metal pillars may be solder free and havesubstantially vertical sidewalls. In some embodiments, a metal cap layeris formed on the top of the metal pillars. The metal cap layer mayinclude nickel, tin, tin-lead, gold, silver, palladium, indium,nickel-palladium-gold, nickel-gold, the like, or a combination thereofand may be formed by a plating process.

In FIG. 20, a carrier substrate de-bonding is performed to detach (or“de-bond”) the first carrier substrate 202 from the structure. Inaccordance with some embodiments, the de-bonding includes projecting alight such as a laser light or an UV light on the release layer 204 sothat the release layer 204 decomposes under the heat of the light andthe first carrier substrate 202 can be removed. The structure is thenflipped over and attached to a second carrier substrate 226, as shown inFIG. 20. The second carrier substrate 226 may be a glass carriersubstrate, a ceramic carrier substrate, a wafer (e.g., a silicon wafer),or the like. An adhesive layer or a release layer (not shown in FIG. 20)may be formed on the second carrier substrate 226 to facilitate theattaching of the structure.

In FIG. 21, a fourth interconnect structure 230 is formed over theencapsulant 208, the through vias 206, and the interconnect devices 50.The fourth interconnect structure 230 includes dielectric layers 232,236, and 240 and includes metallization patterns 234 and 238. Themetallization patterns may also be referred to as redistribution layersor redistribution lines. The fourth interconnect structure 230 is shownas an example having two layers of metallization patterns. More or fewerdielectric layers and metallization patterns may be formed in the fourthinterconnect structure 230. If fewer dielectric layers and metallizationpatterns are to be formed, steps and process discussed below may beomitted. If more dielectric layers and metallization patterns are to beformed, steps and processes discussed below may be repeated.

The dielectric layer 232 is first deposited on the encapsulant 208, thethrough vias 206, and the interconnect devices 50. In some embodiments,the dielectric layer 232 is formed of a photo-sensitive material such asPBO, polyimide, BCB, or the like, which may be patterned using alithography mask. The dielectric layer 232 may be formed by spincoating, lamination, CVD, the like, or a combination thereof. Thedielectric layer 232 is then patterned. The patterning forms openingsexposing portions of the through vias 106 and the TSVs 54 of theinterconnect devices 50. The patterning may be by an acceptable process,such as by exposing the dielectric layer 232 to light when thedielectric layer 232 is a photo-sensitive material or by etching using,for example, an anisotropic etch. If the dielectric layer 232 is aphoto-sensitive material, the dielectric layer 232 can be developedafter the exposure.

The metallization pattern 234 is then formed. The metallization pattern234 includes line portions (also referred to as conductive lines) on andextending along the major surface of the dielectric layer 232. Themetallization pattern 234 further includes via portions (also referredto as conductive vias) extending through the dielectric layer 232 tophysically and electrically couple the through vias 206 and theinterconnect devices 50. The metallization pattern 234 may be formed ina similar manner and of a similar material as the metallization pattern214 of the third interconnect structure 210, described previously forFIG. 18.

The dielectric layer 236 is then deposited on the metallization pattern234 and dielectric layer 232. The dielectric layer 236 may be formed ina manner similar to the dielectric layer 232, and may be formed of asimilar material as the dielectric layer 232. The metallization pattern238 is then formed. The metallization pattern 238 includes line portionson and extending along the major surface of the dielectric layer 236.The metallization pattern 238 further includes via portions extendingthrough the dielectric layer 236 to physically and electrically couplethe metallization pattern 234. The metallization pattern 130 may beformed in a similar manner and of a similar material as themetallization pattern 234. The metallization pattern 238 is the topmostmetallization pattern of the fourth interconnect structure 230. As such,all of the intermediate metallization patterns of the fourthinterconnect structure 230 (e.g., the metallization pattern 234) aredisposed between the metallization pattern 238 and the interconnectdevices 50. In some embodiments, the metallization pattern 238 has adifferent size than the metallization pattern 234. For example, theconductive lines and/or vias of the metallization pattern 238 may bewider or thicker than the conductive lines and/or vias of themetallization pattern 234. Further, the metallization pattern 238 may beformed to a greater pitch than the metallization pattern 234.

The dielectric layer 240 is deposited on the metallization pattern 238and dielectric layer 236. The dielectric layer 240 may be formed in amanner similar to the dielectric layer 232, and may be formed of thesame material as the dielectric layer 232. The dielectric layer 240 isthe topmost dielectric layer of the fourth interconnect structure 230.As such, all of the metallization patterns of the fourth interconnectstructure 230 (e.g., the metallization patterns 234 and 238) aredisposed between the dielectric layer 240 and the interconnect devices50. Further, all of the intermediate dielectric layers of the fourthinterconnect structure 230 (e.g., the dielectric layers 232 and 236) aredisposed between the dielectric layer 240 and the interconnect devices50.

In FIG. 22, UBMs 242 and conductive connectors 244 are formed forexternal connection to the fourth interconnect structure 230, inaccordance with some embodiments. In this manner, an interposerstructure 250 may be formed. The UBMs 242 have bump portions on andextending along the major surface of the dielectric layer 240, and havevia portions extending through the dielectric layer 240 to physicallyand electrically couple the metallization pattern 238. The UBMs 242 maybe formed of the same material as the metallization pattern 238. In someembodiments, the UBMs 242 have a different size than the metallizationpatterns 234 or 238.

Conductive connectors 244 may be formed on the UBMs 242. The conductiveconnectors 244 may be similar to the conductive connectors 222 describedpreviously for FIG. 19. For example, the conductive connectors 244 maybe ball grid array (BGA) connectors, solder balls, metal pillars,controlled collapse chip connection (C4) bumps, micro bumps, electrolessnickel-electroless palladium-immersion gold technique (ENEPIG) formedbumps, or the like. The conductive connectors 244 may include aconductive material such as solder, copper, aluminum, gold, nickel,silver, palladium, tin, the like, or a combination thereof. In someembodiments, the conductive connectors 244 are formed by initiallyforming a layer of solder through evaporation, electroplating, printing,solder transfer, ball placement, or the like. Once a layer of solder hasbeen formed on the structure, a reflow may be performed in order toshape the material into the desired bump shapes. In another embodiment,the conductive connectors 244 comprise metal pillars (such as a copperpillar) formed by a sputtering, printing, electro plating, electrolessplating, CVD, or the like. The metal pillars may be solder free and havesubstantially vertical sidewalls. In some embodiments, a metal cap layeris formed on the top of the metal pillars. The metal cap layer mayinclude nickel, tin, tin-lead, gold, silver, palladium, indium,nickel-palladium-gold, nickel-gold, the like, or a combination thereofand may be formed by a plating process.

Forming an interposer structure 250 in this manner may achieveadvantages. For example, the interposer structure 250 as describedherein may be formed having relatively large dimensions, such as havinglateral dimensions between about 70 mm by 70 mm and about 150 mm by 150mm. This can allow for the formation of a photonic system 300 (see FIG.24) of a correspondingly larger size, allowing for the incorporation ofmore components, increased processing functionality, more flexibility indesign, and/or reduced cost.

The interposer structure 250 allows the incorporation of interconnectdevices 50 to provide improved high-speed transmission of electricalsignals between components of a photonic system 300 (see FIG. 24), suchas between photonic packages 100, processing dies 124, and/or memorydies 126. As such, the interposer structure 250 may be considered a“composite interposer structure.” The incorporation of interconnectdevices 50 can improve the high-speed operation of the photonic system300 and reduce power consumption. In some embodiments, electronicdevices such as active or passive devices may be incorporated within theinterposer structure 250. In some embodiments, the interposer structure250 may be completely free of active devices. An example electronicdevice 402 within an interposer structure 250 is described below in FIG.28.

FIGS. 23 and 24 illustrate the formation of a photonic system 300, inaccordance with some embodiments. In FIG. 23, the interposer structure250 is removed from the second carrier substrate 226, flipped over, andattached to an interconnect substrate 302, in accordance with someembodiments. The interconnect substrate 302 may be for example, a glasssubstrate, a ceramic substrate, a dielectric substrate, an organicsubstrate (e.g., an organic core), a semiconductor substrate (e.g., asemiconductor wafer), the like, or a combination thereof. In someembodiments, he interconnect substrate 302 includes conductive pads 304and conductive routing (e.g., conductive lines, vias, redistributionstructures, or the like). The interconnect substrate 302 may includepassive or active devices, in some embodiments. In some embodiments, theinterconnect substrate 302 may be another type of structure, such as anintegrated fan-out structure, a redistribution structure, or the like.

The conductive connectors 244 of the interposer structure 250 may bebonded to the conductive pads 304 of the interconnect substrate 302,forming electrical connections between the interposer structure 250 andthe interconnect substrate 302. For example, the conductive connectors244 of the interposer structure 250 may be placed in physical contactwith the conductive pads 304 and then a reflow process may be performedto bond solder material of the conductive connectors 244 to theconductive pads 304. In some embodiments, an underfill 306 may be formedbetween the interposer structure 250 and the interconnect substrate 302.

In FIG. 24, one or more photonic packages 100, processing dies 124,and/or memory dies 126 are attached to the interposer structure 250,forming the photonic system 300, in accordance with some embodiments. Asingle photonic package 100, processing die 324, and memory die 326 isshown in FIG. 24, but a photonic system 300 may include more than one ofthese components in any suitable configuration. The photonic package 100shown in FIG. 24 may be similar to the photonic package 100 describedfor FIG. 12, in which the photonic package 100 includes a gratingcoupler 107A. The photonic package 100 may be optically coupled to avertically mounted optical fiber 150, and thus photonic package 100 mayfacilitate optical communication between the processing die 324 andexternal devices, optical networks, or the like. In this manner, aphotonic system 300 may combine processing dies 124 and photonicpackages 100 on a single interposer structure 250. In some embodiments,a photonic system 300 may include a combination of multiple photonicpackages 100 that are coupled to vertically mounted and/or edge mountedoptical fibers 150. The optical fiber 150 may be attached using, forexample, an optical glue 152.

The photonic system 300 shown in FIG. 24 includes a processing die 324and a memory die 326, though in other embodiments a photonic system 300may include more or fewer devices and/or devices of different types thanthese. The processing die 324 may include, for example, a centralprocessing unit (CPU), a graphics processing unit (GPU), anapplication-specific integrated circuit (ASIC), a high performancecomputing (HPC) die, the like, or a combination thereof. The memory die326 may include, for example, a volatile memory such as dynamicrandom-access memory (DRAM), static random-access memory (SRAM), anothertype of memory, or the like. In such embodiments, processing and memoryfunctionality may be integrated within the same die. The processing die324 and memory die 326 shown are example components, and a photonicsystem 300 may include one or more semiconductor devices, chips, dies,system-on-chip (SoC) devices, system-on-integrated-circuit (SoIC)devices, the like, or a combination thereof. The processing die 324 andthe memory die 326 may have a different arrangement than shown in otherembodiments. For example, the processing die 324 may be closer to thephotonic package 100 than the memory die 326. These and otherconfigurations are considered within the scope of the presentdisclosure.

The photonic package 100, the processing die 324, and/or the memory die326 may be electrically connected to the conductive connectors 222 ofthe interposer structure 250. The interposer structure 250 electricallyconnects the photonic package 100, the processing die 324, and/or thememory die 326 and allows transmission of electrical signals between thephotonic package 100, the processing die 324, and/or the memory die 326.For example, the photonic package 100, the processing die 324, and/orthe memory die 326 may be electrically connected by the interconnectstructures 210/230. In some embodiments, the photonic package 100, theprocessing die 324, and/or the memory die 326 are electrically connectedthrough the interposer structure 250 by the interconnect devices 50. Forexample, an interconnect device 50 may conduct electrical signalsbetween the processing die 324 and the memory die 326, or aninterconnect device 50 may conduct electrical signals between theprocessing die 324 and the photonic package 100. The use of interconnectdevices 50 in this manner allows for improved high-speed communicationbetween the photonic package 100, the processing die 324, and/or thememory die 326. For example, the interconnect devices 50 may haveconductive routing of a finer pitch than the conductive routing of theinterconnect structures 210/230 or of the interconnect substrate 302,which allows for improved high-speed transmission of electrical signals.The interconnect devices 50 also may be located closer to the photonicpackage 100, the processing die 324, or the memory die 326 than, forexample, the interconnect substrate 302, reducing routing distances andallowing for reduced noise, improved high-speed performance, and reducedpower consumption. Multiple interconnect devices 50 may be used in anysuitable configuration within the interposer structure 250 of a photonicsystem 300, allowing for flexible design and the formation of photonicsystems 300 of larger size.

In some embodiments, the photonic package 100 of the photonic system 300receives optical signals from an optical fiber 150 (e.g., at a gratingcoupler 107A) which are detected using the photodetector 106A of thephotonic package 100. The electronic die 122 in the photonic package 100may then generate corresponding electrical signals based on the opticalsignals. These electrical signals may then be transmitted to theprocessing die 324 through an interconnect device 50 of the interposerstructure 250. The processing die 324 may then process the electricalsignals or provide other appropriate computing functionality. In someembodiments, the processing die 324 generates electrical signals thatmay be transmitted to the electronic die 122 of the photonic package 100through an interconnect device 50 of the interposer structure 250. Theelectronic die 122 may then generate optical signals using a modulator106B and couple these optical signals into an optical fiber 150 (e.g.,using a grating coupler 107A). In some embodiments, the processing die324 controls the electronic die 122 of the photonic package 100. In thismanner, the photonic package 100 may be considered an “opticalinput/output (I/O) module” for the photonic system 300. Use of photonicpackages 100 in this manner may reduce the size or cost of a photonicsystem 300 while providing high-speed optical communication withexternal optical components.

FIG. 25 illustrates a photonic system 300 that is coupled to an edgemounted optical fiber 150, in accordance with some embodiments. Thephotonic system 300 shown in FIG. 25 is similar to the photonic system300 shown in FIG. 24 or elsewhere herein, except that the photonicpackage 100 is optically coupled to an edge mounted optical fiber 150.The optical fiber 150 may be attached using, for example, an opticalglue 152. The photonic package 100 shown in FIG. 25 is similar to thephotonic package 100 described for FIG. 13, in which the photonicpackage 100 includes an edge coupler 107B. In this manner, a photonicsystem 300 may include photonic packages 100 configured to be coupled toedge mounted optical fibers 150, vertically mounted optical fibers 150,or a combination thereof.

FIG. 26 shows a plan view of a photonic system 300, in accordance withsome embodiments. The photonic system 300 is similar to that shown inFIG. 24 or elsewhere herein, except multiple photonic packages 100 andmultiple memory dies 126 are attached to the interposer structure 250.The multiple photonic packages 100 of the photonic system 300 may beelectrically connected to the processing die 324 and/or the memory dies126 through interconnect devices 50 within the interposer structure 250.The multiple memory dies 126 of the photonic system 300 may beelectrically connected to the processing die 324 through interconnectdevices 50 within the interposer substrate 250. An interconnect device50 may laterally overlap components that are connected by theinterconnect device 50. For example, an interconnect device 50 maylaterally overlap a photonic package 100 and a processing die 124 andalso interconnect that photonic package and that processing die 124. Theinterconnect devices 50 may overlap and/or interconnect any two or morecomponents, such as photonic packages 100, processing dies 124, ormemory dies 126. The interconnect devices 50 provide high-speedconnections between components of the photonic system 300 and thus canimprove the high-speed performance of the photonic system 300.

A photonic system 300 as described herein may be configured tocommunicate using multiple optical fibers 150 and multiple photonicpackages 100. A photonic system 300 may include more or fewer photonicpackages 100 or memory dies 124, or include multiple processing dies124, which may be of similar or different types or configurations. Thecomponents of the photonic system 300 may also have a differentarrangement or configuration than shown in FIG. 26.

FIG. 27 illustrates a photonic system 300 including a computing package350, in accordance with some embodiments. The photonic system 300 issimilar to the photonic system 300 described for FIG. 24 or elsewhereherein, except that the processing die 324 and memory die 326 areconnected to an interconnect structure 352 to form a computing package350. Like reference numerals indicate like elements, which may be formedusing like processes. The computing package 350 is attached to theinterposer structure 250. The interconnect structure 352 may includeconductive routing (e.g., conductive lines, vias, through vias,redistribution layers, or the like) that electrically connects theprocessing die 324 and the memory die 326. The interconnect structure352 provides additional electrical routing between the processing die324 and the memory die 326, and may be considered an interposer in somecases. The computing package 350 may be considered a system-on-chip(SoC) device, a system-on-integrated-circuit (SoIC) device, or the like.Multiple processing dies 124 or multiple memory dies 126 may be attachedto the interconnect structure 352 to form the computing package 350.These and other configurations of a computing package 350 are consideredwithin the scope of the present disclosure.

FIG. 28 illustrates a photonic system 400 that includes an electronicdevice 402, in accordance with some embodiments. The photonic system 400is similar to the photonic system 300 shown in FIG. 24 or elsewhereherein, except that an electronic device 402 is incorporated within theinterposer structure 250 in addition to an interconnect device 50. Likereference numerals indicate like elements, which may be formed usinglike processes. Similar to the interconnect devices 50, the electronicdevice 402 may be electrically connected to one or both of theinterconnect structures 210/230 of the interposer structure 250. Theelectronic device 402 may be incorporated into the interposer structure250 similarly to the interconnect device 50, such placing the electronicdevice 402 onto the release layer 204 as described for FIG. 15 and thenperforming subsequent processing steps similarly. One electronic device402 is shown in FIG. 28, but multiple electronic devices 402 may bepresent in other embodiments. The multiple electronic devices mayinclude similar electronic devices 402 and/or different electronicdevices 402.

The electronic devices 402 may be, for example, a die (e.g., anintegrated circuit die, power integrated circuit die, logic die, or thelike), a chip, a semiconductor device, a memory device (e.g., SRAM orthe like), a passive device (e.g., an integrated passive device (IPD), amulti-layer ceramic capacitor (MLCC), an integrated voltage regulator(IVR), or the like), the like, or a combination thereof. The electronicdevice 402 may comprise one or more active devices such as transistors,diodes, or the like and/or one or more passive devices such ascapacitors, resistors, inductors, or the like. In this manner, differentelectronic devices 402 can be implemented in an interposer structure250, providing additional functionality and performance benefits. Forexample, by incorporating electronic devices 402 such as IPDs or IVRsthat are coupled to the power routing of the photonic system 400, thestability of the power supplied to the photonic packages 100, processingdies 124, and/or memory dies 126 may be improved. In some embodiments,the electronic devices 402 may also provide additional routing betweenthe photonic packages 100, processing dies 124, and/or memory dies 126,similar to that provided by interconnect devices 50.

Embodiments may achieve advantages. The embodiments described hereinallow for a photonic system to be formed with less cost, larger size,and improved operation. For example, by bonding electronic dies to aphotonic routing structure, an optical fiber may be mounted vertically.This allows for improved optical coupling to an optical fiber forcommunication with external optical components. The electronic dies areused as an “optical I/O interface” between optical communicationscomponents and processing dies of the photonic system. For example, theelectronic dies can serve as the optical I/O interface for a CoWoS HPCsystem formed on the same substrate in a MCM package. In some cases,high speed SerDes devices and may be integrated with photonics devicewhile having flexible and efficient optical fiber attachment, whichincludes in both vertical or edge optical fiber connections. By havingedge surfaces or top surfaces of a photonic device exposed to theatmosphere, signal loss due to optical coupling can be reduced. In somecases, the embodiments described herein may reduce processing costs andreduce the size of a photonic system. In some cases, the use of a singlephotonic routing structure to optically connect computing sites canallow increased device performance in, e.g., HPC applications thatinclude many interconnected computer systems. Transmitting opticalsignals between computing sites may have less signal attenuation at highfrequencies, lower crosstalk, and less switching noise than transmittingelectrical signals with e.g., conductive lines and the like. Opticalcommunication may allow for lower-latency and higher-bandwidthcommunication between some of the sites.

Embodiments may achieve advantages. The embodiments described hereinallow for an optical coupling to a photonic system to be formed withless cost and improved operation. For example, by bonding electronicdies to a waveguide structure, an optical fiber may be mountedvertically. This allows for improved optical coupling to an opticalfiber. The electronic dies are used in a photonic package as an “opticalI/O interface” between optical communications components and processingdies. For example, the electronic dies can serve as the optical I/Ointerface for a CoWoS HPC system formed on the same substrate in a MCMpackage. In some cases, high speed SerDes devices and may be integratedwith photonics device while having flexible and efficient optical fiberattachment, which includes in both vertical or edge optical fiberconnections. The photonic packages and processing dies are connected toan interposer structure that provides electrical connections betweenthese components. The interposer structure may also include interconnectdevices that provide improved high speed electrical connections betweenthese components. When forming the photonic system, photonic packages,electronic dies, processing dies, or the like are connected to theinterposer structure near the end of the process, thus allowing testingof the interposer structure prior to connection of these components.This can improve yield and reduce cost of forming a photonic system.

In accordance with an embodiment, a method includes forming a photonicpackage, wherein forming the photonic package includes patterning asilicon layer to form a waveguide; forming a first interconnectstructure over the waveguide; and bonding a first semiconductor die tothe first interconnect structure using a dielectric-to-dielectricbonding process; forming an interconnect device, wherein theinterconnect device is free of active devices, wherein forming theinterconnect device includes forming a routing structure on a first sideof a substrate; and forming conductive connectors on and electricallyconnected to the routing structure; forming an interposer structure,wherein forming the interposer structure includes forming a first via ona first carrier; placing the interconnect device on the first carrier;encapsulating the first via and the interconnect device with anencapsulant; and forming a second interconnect structure on theinterconnect device and the first via, wherein the second interconnectstructure is electrically connected to the first via and to theconductive connectors of the interconnect device; and bonding thephotonic package and a second semiconductor die to the secondinterconnect structure, wherein the photonic package and the secondsemiconductor die are electrically connected through the interconnectdevice to each other. In an embodiment, the method includes bonding amemory die to the second interconnect structure. In an embodiment,forming the photonic package includes forming a photodetector that isoptically coupled to the waveguide, wherein the photodetector iselectrically connected to the interconnect structure. In an embodiment,forming the photonic package includes patterning the silicon layer toform a grating coupler. In an embodiment, the method includes attachingan optical fiber to the photonic package over the interconnect structureof the photonic package, wherein the optical fiber is optically coupledto the grating coupler. In an embodiment, forming the photonic packageincludes patterning the silicon layer to form an edge coupler. In anembodiment, the method includes forming a third interconnect structureon a second side of the substrate of the interconnect device, whereinthe second side is opposite the first side, and wherein the thirdinterconnect structure is electrically connected to the interconnectdevice and the first via. In an embodiment, forming the interconnectdevice includes forming through vias extending through the substrate.

In accordance with an embodiment, a method includes forming vias on afirst carrier; placing interconnect devices on the first carrier,wherein each interconnect device is free of active devices, and whereineach interconnect device includes a first interconnect structure on asubstrate and through-substrate vias (TSVs) extending through thesubstrate; encapsulating the vias and the interconnect devices with anencapsulant; forming a second interconnect structure over a first sideof the vias, the interconnect devices, and the encapsulant, wherein thesecond interconnect structure is electrically connected to the vias andto respective first interconnect structures of the interconnect devices;forming conductive connectors on the second interconnect structure,wherein the conductive connectors are connected to the secondinterconnect structure; bonding a processing die to first conductiveconnectors of the conductive connectors, wherein the processing die iselectrically connected to a first interconnect device of theinterconnect devices; and bonding a photonic package to secondconductive connectors of the conductive connectors, wherein the photonicpackage is electrically connected to the first interconnect device ofthe interconnect devices, and wherein the photonic package includes awaveguide, a photodetector optically coupled to the waveguide, and asemiconductor die electrically connected to the photodetector. In anembodiment, the method includes mounting an optical fiber to a sidewallof the photonic package, wherein the optical fiber is optically coupledto the waveguide. In an embodiment, the method includes mounting anoptical fiber to a top surface of the photonic package, wherein theoptical fiber is optically coupled to the waveguide.

In accordance with an embodiment, a package includes an interposerstructure including a first via; a first interconnect device includingconductive routing, wherein the first interconnect device is free ofactive devices; an encapsulant surrounding the first via and the firstinterconnect device; and a first interconnect structure over theencapsulant, the first interconnect structure connected to the first viaand the first interconnect device; a first semiconductor die bonded tothe first interconnect structure, wherein the first semiconductor die iselectrically connected to the first interconnect device; and a firstphotonic package bonded to the first interconnect structure, wherein thefirst photonic package is electrically connected to the firstsemiconductor die through the first interconnect device, wherein thefirst photonic package includes a photonic routing structure including awaveguide on a substrate; a second interconnect structure over thephotonic routing structure, the second interconnect structure includingconductive features and dielectric layers; and an electronic die bondedto the second interconnect structure, wherein the electronic die iselectrically connected to the second interconnect structure. In anembodiment, the first photonic package includes a grating coupler on thesubstrate; and an optical fiber mounted over the first photonic package,wherein the optical fiber is optically coupled to the grating coupler.In an embodiment, a region of the second interconnect structure betweenthe grating coupler and the optical fiber is free of conductivefeatures. In an embodiment, the dielectric layers of the secondinterconnect structure are transparent to optical signals transmittedbetween the grating coupler and the optical fiber. In an embodiment, theinterposer structure includes a second interconnect device; and a secondphotonic package bonded to the first interconnect structure, wherein thesecond photonic package and the first semiconductor die are electricallyconnected to the second interconnect device. In an embodiment, the firstsemiconductor die is connected to the first interconnect structure by aninterposer. In an embodiment, the interposer structure includes anintegrated passive device (IPD) electrically connected to the firstinterconnect structure, wherein the IPD is surrounded by theencapsulant. In an embodiment, the first interconnect device laterallyoverlaps the first semiconductor die and the first photonic package. Inan embodiment, the photonic routing structure includes a photonicdevice, wherein the electronic die is electrically connected to thephotonic device through the second interconnect structure.

The foregoing outlines features of several embodiments so that thoseskilled in the art may better understand the aspects of the presentdisclosure. Those skilled in the art should appreciate that they mayreadily use the present disclosure as a basis for designing or modifyingother processes and structures for carrying out the same purposes and/orachieving the same advantages of the embodiments introduced herein.Those skilled in the art should also realize that such equivalentconstructions do not depart from the spirit and scope of the presentdisclosure, and that they may make various changes, substitutions, andalterations herein without departing from the spirit and scope of thepresent disclosure.

What is claimed is:
 1. A method, comprising: forming a photonic package,wherein forming the photonic package comprises: patterning a siliconlayer to form a waveguide; forming a first interconnect structure overthe waveguide; and bonding a first semiconductor die to the firstinterconnect structure using a dielectric-to-dielectric bonding process;forming an interconnect device, wherein the interconnect device is freeof active devices, wherein forming the interconnect device comprises:forming a routing structure on a first side of a substrate; and formingconductive connectors on and electrically connected to the routingstructure; forming an interposer structure, wherein forming theinterposer structure comprises: forming a first via on a first carrier;placing the interconnect device on the first carrier; encapsulating thefirst via and the interconnect device with an encapsulant; and forming asecond interconnect structure on the interconnect device and the firstvia, wherein the second interconnect structure is electrically connectedto the first via and to the conductive connectors of the interconnectdevice; and bonding the photonic package and a second semiconductor dieto the second interconnect structure, wherein the photonic package andthe second semiconductor die are electrically connected through theinterconnect device to each other.
 2. The method of claim 1, furthercomprising bonding a memory die to the second interconnect structure. 3.The method of claim 1, wherein forming the photonic package furthercomprises forming a photodetector that is optically coupled to thewaveguide, wherein the photodetector is electrically connected to theinterconnect structure.
 4. The method of claim 1, wherein forming thephotonic package further comprises patterning the silicon layer to forma grating coupler.
 5. The method of claim 4, further comprisingattaching an optical fiber to the photonic package over the interconnectstructure of the photonic package, wherein the optical fiber isoptically coupled to the grating coupler.
 6. The method of claim 1,wherein forming the photonic package further comprises patterning thesilicon layer to form an edge coupler.
 7. The method of claim 1, furthercomprising forming a third interconnect structure on a second side ofthe substrate of the interconnect device, wherein the second side isopposite the first side, and wherein the third interconnect structure iselectrically connected to the interconnect device and the first via. 8.The method of claim 1, wherein forming the interconnect device furthercomprises forming through vias extending through the substrate.
 9. Amethod comprising: forming a plurality of vias on a first carrier;placing a plurality of interconnect devices on the first carrier,wherein each interconnect device is free of active devices, and whereineach interconnect device comprises a first interconnect structure on asubstrate and through-substrate vias (TSVs) extending through thesubstrate; encapsulating the plurality of vias and the plurality ofinterconnect devices with an encapsulant; forming a second interconnectstructure over a first side of the plurality of vias, the plurality ofinterconnect devices, and the encapsulant, wherein the secondinterconnect structure is electrically connected to the plurality ofvias and to respective first interconnect structures of the plurality ofinterconnect devices; forming a plurality of conductive connectors onthe second interconnect structure, wherein the conductive connectors areconnected to the second interconnect structure; bonding a processing dieto first conductive connectors of the plurality of conductiveconnectors, wherein the processing die is electrically connected to afirst interconnect device of the plurality of interconnect devices; andbonding a photonic package to second conductive connectors of theplurality of conductive connectors, wherein the photonic package iselectrically connected to the first interconnect device of the pluralityof interconnect devices, and wherein the photonic package comprises awaveguide, a photodetector optically coupled to the waveguide, and asemiconductor die electrically connected to the photodetector.
 10. Themethod of claim 9, further comprising mounting an optical fiber to asidewall of the photonic package, wherein the optical fiber is opticallycoupled to the waveguide.
 11. The method of claim 9, further comprisingmounting an optical fiber to a top surface of the photonic package,wherein the optical fiber is optically coupled to the waveguide.
 12. Apackage, comprising: an interposer structure comprising: a first via; afirst interconnect device comprising conductive routing, wherein thefirst interconnect device is free of active devices; an encapsulantsurrounding the first via and the first interconnect device; and a firstinterconnect structure over the encapsulant, the first interconnectstructure connected to the first via and the first interconnect device;a first semiconductor die bonded to the first interconnect structure,wherein the first semiconductor die is electrically connected to thefirst interconnect device; and a first photonic package bonded to thefirst interconnect structure, wherein the first photonic package iselectrically connected to the first semiconductor die through the firstinterconnect device, wherein the first photonic package comprises: aphotonic routing structure comprising a waveguide on a substrate; asecond interconnect structure over the photonic routing structure, thesecond interconnect structure comprising conductive features anddielectric layers; and an electronic die bonded to the secondinterconnect structure, wherein the electronic die is electricallyconnected to the second interconnect structure.
 13. The package of claim12, wherein the first photonic package further comprises: a gratingcoupler on the substrate; and an optical fiber mounted over the firstphotonic package, wherein the optical fiber is optically coupled to thegrating coupler.
 14. The package of claim 13, wherein a region of thesecond interconnect structure between the grating coupler and theoptical fiber is free of conductive features.
 15. The package of claim13, wherein the dielectric layers of the second interconnect structureare transparent to optical signals transmitted between the gratingcoupler and the optical fiber.
 16. The package of claim 12, wherein theinterposer structure comprises: a second interconnect device; and asecond photonic package bonded to the first interconnect structure,wherein the second photonic package and the first semiconductor die areelectrically connected to the second interconnect device.
 17. Thepackage of claim 12, wherein the first semiconductor die is connected tothe first interconnect structure by an interposer.
 18. The package ofclaim 12, wherein the interposer structure comprises an integratedpassive device (IPD) electrically connected to the first interconnectstructure, wherein the IPD is surrounded by the encapsulant.
 19. Thepackage of claim 12, wherein the first interconnect device laterallyoverlaps the first semiconductor die and the first photonic package. 20.The package of claim 12, wherein the photonic routing structurecomprises a photonic device, wherein the electronic die is electricallyconnected to the photonic device through the second interconnectstructure.